Title :
Continuous-wave silicon lasers based on stimulated Raman scattering
Author :
Rong, Haisheng ; Jones, Richard ; Liu, Ansheng ; Paniccia, Mario ; Cohen, Oded
Author_Institution :
Intel Corp., Santa Clara, CA
Abstract :
Using reverse biased p-i-n diode structure, we efficiently reduced nonlinear absorption and achieved continuous-wave lasing in silicon waveguide cavities based on stimulated Raman scattering. We report here the lasing characteristics for different laser cavity configurations.
Keywords :
laser beams; microcavity lasers; p-i-n diodes; semiconductor lasers; silicon; stimulated Raman scattering; Si; continuous wave silicon lasers; laser cavity; lasing characteristic; nonlinear absorption reduction; reverse biased p-i-n diode structure; silicon waveguide cavity; stimulated Raman scattering; Coatings; Laser excitation; Optical films; Optical waveguides; P-i-n diodes; Pump lasers; Raman scattering; Silicon; Stimulated emission; Waveguide lasers; (130.0250) Optoelectronics; (140.3550) Lasers, Raman;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628349
