Problems related to power semiconductor device modelling

Numerical programs intended for power semiconductor device design and research are described. These programs are based on original models of device characteristics specially adjusted for power semiconductor device simulation. The programs are based on an original formulation of charge carrier transport equations. These new transport equations prove to be necessary for correct treatment of nonlinear physical phenomena which arise under high injection conditions. The programs take into account the constructive peculiarities of devices, i.e. type of device construction (pressed, alloyed, etc.), thickness and thermophysical parameters of layers, the contact thermal resistance (for devices with pressed construction), the existence of the auxiliary structure in thyristors and the complicated topology of the gate electrode