Title :
A two-stage all monolithic X-band power amplifier
Author :
Vorhaus, J. ; Pucel, R. ; Tajima, Y. ; Fabian, W.
Author_Institution :
Raytheon Company, Waltham, MA, USA
Abstract :
An X-band amplifier which produces 565mW with 8dB gain (12dB small-signal gain), includes all bias and tuning circuits on-chip, and requires no bonding to a GaAs chip, will be discussed.
Keywords :
Bonding; Capacitors; Circuit optimization; FETs; Gallium arsenide; Gold; Lead; Microstrip; Power amplifiers; Substrates;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1981.1156272
