Title :
A physically-based lumped-charge P-ν-N diode model
Author :
Ma, C.L. ; Lauritzen, P.O. ; Lin, P.Y.
Author_Institution :
Washington Univ., Seattle, WA, USA
Abstract :
The P-v-N diode model is developed systematically from fundamental device equations using the lumped-charge modeling technique. The model includes basic DC and transient characteristics of the diode, such as low and high level injection, end region recombination, forward and reverse recovery. Twelve relatively simple model equations provide static and dynamic information on electron and hole charges, currents and voltages at five different regions inside a discretized device structure. Simple parameter extraction is a unique feature
Keywords :
power electronics; semiconductor device models; semiconductor diodes; DC characteristics; P-v-N diode model; conductivity modulation; discretized device structure; electron charge; end region recombination; forward recovery; high level injection; hole charges; low level injection; lumped charge model; parameter extraction; reverse recovery; transient characteristics;
Conference_Titel :
Power Electronics and Applications, 1993., Fifth European Conference on
Conference_Location :
Brighton
