Title :
Silicon-on sapphire monolithic microwave ICs
Author :
Naster, R. ; Ying Hwang ; Zaidel, S.
Author_Institution :
General Electric Company, Sycracuse, NY, USA
Abstract :
This paper will describe an expandable silicon single 50μ gate MESFET used for switching and a 400μm interdigitated 8-gate device used for low-noise amplification. Also to be discussed will be the design of a 3-stage amplifier with a 20dB gain over a 15% 3dB bandwidth.
Keywords :
Fabrication; Frequency; Implants; Low-noise amplifiers; MESFETs; MMICs; Microwave devices; Noise figure; Noise measurement; Silicon;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1981.1156273
