• DocumentCode
    287304
  • Title

    Functional integration of MOS and thyristor devices: a useful concept to create new light triggered integrated switches for power conversion

  • Author

    Sanchez, J.L. ; Berriane, R. ; Jalade, J. ; Laur, J.-P.

  • Author_Institution
    Lab. d´´Autom. d´´Analyse des Syst., CNRS, Toulouse, France
  • fYear
    1993
  • fDate
    13-16 Sep 1993
  • Firstpage
    5
  • Abstract
    In power electronics converters, a galvanic insulation between the drive circuits and the power stage is usually needed, and it may be relatively delicate to implement it according to the application considered. When high galvanic insulation is required, a good solution consists of integrating optical control detection circuits with each power device. Integration is a natural way of enhancing design, performance and reliability, resulting in easier use. To illustrate this approach, the authors present in this paper a light triggered thyristor with a MOS amplifying gate whose conception is based on functional integration of MOS and thyristor elements. An application of this integrated switch in a power converter is also given
  • Keywords
    driver circuits; photoconducting devices; power convertors; power integrated circuits; semiconductor switches; thyristor applications; MOS amplifying gate; design; drive circuits; functional integration; galvanic insulation; high galvanic insulation; light triggered integrated switches; optical control detection circuits; performance; power conversion; power electronics converters; power stage; reliability; thyristor devices;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Power Electronics and Applications, 1993., Fifth European Conference on
  • Conference_Location
    Brighton
  • Type

    conf

  • Filename
    265019