DocumentCode
287304
Title
Functional integration of MOS and thyristor devices: a useful concept to create new light triggered integrated switches for power conversion
Author
Sanchez, J.L. ; Berriane, R. ; Jalade, J. ; Laur, J.-P.
Author_Institution
Lab. d´´Autom. d´´Analyse des Syst., CNRS, Toulouse, France
fYear
1993
fDate
13-16 Sep 1993
Firstpage
5
Abstract
In power electronics converters, a galvanic insulation between the drive circuits and the power stage is usually needed, and it may be relatively delicate to implement it according to the application considered. When high galvanic insulation is required, a good solution consists of integrating optical control detection circuits with each power device. Integration is a natural way of enhancing design, performance and reliability, resulting in easier use. To illustrate this approach, the authors present in this paper a light triggered thyristor with a MOS amplifying gate whose conception is based on functional integration of MOS and thyristor elements. An application of this integrated switch in a power converter is also given
Keywords
driver circuits; photoconducting devices; power convertors; power integrated circuits; semiconductor switches; thyristor applications; MOS amplifying gate; design; drive circuits; functional integration; galvanic insulation; high galvanic insulation; light triggered integrated switches; optical control detection circuits; performance; power conversion; power electronics converters; power stage; reliability; thyristor devices;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics and Applications, 1993., Fifth European Conference on
Conference_Location
Brighton
Type
conf
Filename
265019
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