DocumentCode
287307
Title
An optically activated SIT for high voltage applications
Author
Nuttall, K.I. ; Chen, W.
Author_Institution
Liverpool Univ., UK
fYear
1993
fDate
13-16 Sep 1993
Firstpage
283
Abstract
A twin grid bipolar mode SIT structure is proposed for use as an optically activated transistor with normally off electrical characteristics. The introduction of a second grid allows advantage to be taken of the high current gains obtainable from the SIT to produce a structure that combines high responsivity with a high blocking voltage capability. Computer simulation results are presented to indicate the capabilities of the device and the consequences of certain design changes are investigated
Keywords
field effect transistors; power transistors; bipolar mode; blocking voltage capability; high voltage applications; optically activated SIT; optically activated transistor; static induction transistor; twin grid;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics and Applications, 1993., Fifth European Conference on
Conference_Location
Brighton
Type
conf
Filename
265023
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