Title :
Non-stationary effect in ultra small mos devices
Author :
Koyanagi, Mitsumasa
Author_Institution :
Tohoku University
Keywords :
Electron mobility; Impact ionization; Impurities; Low voltage; MOS devices; MOSFET circuits; Machine intelligence; Monte Carlo methods; Systems engineering and theory; Temperature;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.771111
