Intersubband transition device using AlN waveguide with GaN/AlN quantum wells

Author

Kumtornkittikul, Chaiyasit ; Iizuka, Norio ; Suzuki, Nobuo ; Nakano, Yoshiaki

Author_Institution

Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Tokyo

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

We demonstrate fabrication of the first AlN-waveguide-based intersubband transition device. The device can operate at 1.3 mum, confirmed with the new waveguide-coupling measurement method. The intersubband absorption saturation in the device is also successfully demonstrated.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; light absorption; optical waveguides; semiconductor quantum wells; wide band gap semiconductors; AlN; GaN-AlN; intersubband absorption saturation; intersubband transition device; quantum wells; waveguide-coupling measurement method; wavelength 1.3 mum; Absorption; Communication switching; Epitaxial growth; Epitaxial layers; Gallium nitride; Optical pulses; Optical switches; Optical waveguides; Quantum well devices; Waveguide transitions; (230.5590) Quantum-well devices; (250.7360) Waveguide modulators; (320.7080) Ultrafast devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4628352

Filename

4628352