Title :
1200 V snubberless symmetrical GTO for AC switches
Author :
Kerboua, H. ; Sebille, D. ; Miserey, F.
Author_Institution :
Telemecanique Res. Center, Nanterre, France
Abstract :
A specific GTO dedicated to a solid state contactor-breaker is presented. This device features a low voltage drop in conduction. The study of the influence of the gate drive shows that; if the extraction of the reverse gate current is very fast, it is possible to turn-off without snubber a cathode current density comparable to cascode structure (850 A/cm2). The RBSOA of the GTO is studied while varying some structural parameters such as: the gate sheet resistance, the width of the cathode finger and the gain of the PNP section of the device. This device, associated to its dedicated drive, allows the design of solid state circuit breakers with minimum conduction losses
Keywords :
semiconductor switches; thyristors; AC switches; PNP section; RBSOA; cathode finger width; gate drive; gate sheet resistance; gate turnoff thyristor; p-n-p section gain; reverse bias SOA; reverse gate current; snubberless symmetrical GTO; solid state circuit breakers; solid state contactor-breaker;
Conference_Titel :
Power Electronics and Applications, 1993., Fifth European Conference on
Conference_Location :
Brighton
