DocumentCode :
2873095
Title :
Switching characteristics analysis of GaAs HBTs using eye diagram
Author :
Venkatesha, Divya B. ; Chitrashekaraiah, S. ; Rezazadeh, A.A.
Author_Institution :
Sch. of Electr. Eng. & Electron., Manchester Univ., UK
fYear :
2005
fDate :
5-6 Sept. 2005
Firstpage :
39
Lastpage :
42
Abstract :
This paper presents the use of eye diagram as a functional tool to study the response of InGaP/GaAs double heterojunction bipolar transistor (DHBT) in digital environment. In this work, sensitivity analysis carried out to study the switching characteristics and to quantify the performance of the devices through the eye diagrams has been presented for the first time. The discussion includes the responses of the device to timing errors especially at higher data rates and hence the digital signal transmission limitations. Also, the effects of various small signal parameters on the switching characteristics and their limitations on the device performance are discussed.
Keywords :
III-V semiconductors; bipolar transistor switches; digital signals; gallium arsenide; heterojunction bipolar transistors; indium compounds; phosphorus compounds; sensitivity analysis; DHBT; InGaP-GaAs; digital signal transmission limitation; double heterojunction bipolar transistor; eye diagram; sensitivity analysis; switching characteristics analysis; timing error; Bipolar transistors; Gallium arsenide; Heterojunction bipolar transistors; Performance analysis; Scattering parameters; Signal analysis; Signal generators; Solid modeling; Time measurement; Timing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Frequency Postgraduate Student Colloquium, 2005
Print_ISBN :
0-7803-9500-X
Type :
conf
DOI :
10.1109/HFPSC.2005.1566357
Filename :
1566357
Link To Document :
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