DocumentCode
2873095
Title
Switching characteristics analysis of GaAs HBTs using eye diagram
Author
Venkatesha, Divya B. ; Chitrashekaraiah, S. ; Rezazadeh, A.A.
Author_Institution
Sch. of Electr. Eng. & Electron., Manchester Univ., UK
fYear
2005
fDate
5-6 Sept. 2005
Firstpage
39
Lastpage
42
Abstract
This paper presents the use of eye diagram as a functional tool to study the response of InGaP/GaAs double heterojunction bipolar transistor (DHBT) in digital environment. In this work, sensitivity analysis carried out to study the switching characteristics and to quantify the performance of the devices through the eye diagrams has been presented for the first time. The discussion includes the responses of the device to timing errors especially at higher data rates and hence the digital signal transmission limitations. Also, the effects of various small signal parameters on the switching characteristics and their limitations on the device performance are discussed.
Keywords
III-V semiconductors; bipolar transistor switches; digital signals; gallium arsenide; heterojunction bipolar transistors; indium compounds; phosphorus compounds; sensitivity analysis; DHBT; InGaP-GaAs; digital signal transmission limitation; double heterojunction bipolar transistor; eye diagram; sensitivity analysis; switching characteristics analysis; timing error; Bipolar transistors; Gallium arsenide; Heterojunction bipolar transistors; Performance analysis; Scattering parameters; Signal analysis; Signal generators; Solid modeling; Time measurement; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
High Frequency Postgraduate Student Colloquium, 2005
Print_ISBN
0-7803-9500-X
Type
conf
DOI
10.1109/HFPSC.2005.1566357
Filename
1566357
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