• DocumentCode
    2873095
  • Title

    Switching characteristics analysis of GaAs HBTs using eye diagram

  • Author

    Venkatesha, Divya B. ; Chitrashekaraiah, S. ; Rezazadeh, A.A.

  • Author_Institution
    Sch. of Electr. Eng. & Electron., Manchester Univ., UK
  • fYear
    2005
  • fDate
    5-6 Sept. 2005
  • Firstpage
    39
  • Lastpage
    42
  • Abstract
    This paper presents the use of eye diagram as a functional tool to study the response of InGaP/GaAs double heterojunction bipolar transistor (DHBT) in digital environment. In this work, sensitivity analysis carried out to study the switching characteristics and to quantify the performance of the devices through the eye diagrams has been presented for the first time. The discussion includes the responses of the device to timing errors especially at higher data rates and hence the digital signal transmission limitations. Also, the effects of various small signal parameters on the switching characteristics and their limitations on the device performance are discussed.
  • Keywords
    III-V semiconductors; bipolar transistor switches; digital signals; gallium arsenide; heterojunction bipolar transistors; indium compounds; phosphorus compounds; sensitivity analysis; DHBT; InGaP-GaAs; digital signal transmission limitation; double heterojunction bipolar transistor; eye diagram; sensitivity analysis; switching characteristics analysis; timing error; Bipolar transistors; Gallium arsenide; Heterojunction bipolar transistors; Performance analysis; Scattering parameters; Signal analysis; Signal generators; Solid modeling; Time measurement; Timing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Frequency Postgraduate Student Colloquium, 2005
  • Print_ISBN
    0-7803-9500-X
  • Type

    conf

  • DOI
    10.1109/HFPSC.2005.1566357
  • Filename
    1566357