• DocumentCode
    2873160
  • Title

    Lithography Constrained Placement and Post-Placement Layout Optimization for Manufacturability

  • Author

    Dhumane, Nishant ; Srivathsa, Sudheendra K. ; Kundu, Sandip

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Massachusetts, Amherst, MA, USA
  • fYear
    2011
  • fDate
    4-6 July 2011
  • Firstpage
    200
  • Lastpage
    205
  • Abstract
    Technology scaling has brought about sub-wavelength lithography. Sub-wavelength lithography requires resolution enhancement techniques (RETs) including significant layout constraints and manufacturability verification using lithography simulation. Despite the use of these techniques, the design iterations may take too long and may not converge. In standard cell based designs, inter-feature interactions across abutting standard cells can result in reduced design and parametric yield. In this paper, we propose a litho aware design methodology that aims at fixing the violations due to standard cell abutments. The major contributions of this work are a phased approach towards elimination of lithography violations by 1) Pre-characterization of abutments for early detection of violations, 2) Iterative changes to placement to minimize violations and 3) SRAF insertion rules to eliminate violations. Experimental results on ISCAS and AES benchmark circuits show that the proposed methodology eliminates all lithography violations with no impact on area and minimal impact on performance.
  • Keywords
    design for manufacture; lithography; optimisation; SRAF insertion rules; design for manufacturability; litho aware design methodology; lithography constrained placement; lithography simulation; lithography violations; manufacturability verification; post-placement layout optimization; resolution enhancement techniques; subwavelength lithography; Benchmark testing; Computational modeling; Layout; Libraries; Lithography; Optimization; Timing; Design for Manufacturability (DFM); Edge Placement Error (EPE); Lithography; Sub-resolution assist features(SRAFs);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI (ISVLSI), 2011 IEEE Computer Society Annual Symposium on
  • Conference_Location
    Chennai
  • ISSN
    2159-3469
  • Print_ISBN
    978-1-4577-0803-9
  • Electronic_ISBN
    2159-3469
  • Type

    conf

  • DOI
    10.1109/ISVLSI.2011.32
  • Filename
    5992480