Title :
New IGBT model for PSPICE
Author :
Protiwa, F.F. ; Apeldoorn, O. ; Groos, N.
Author_Institution :
Inst. of Power Electron. & Electr. Drives, Aachen Univ. of Technol., Germany
Abstract :
In recent years the IGBT has been widely used in new power electronics applications. At the same time the importance of simulation in power electronics grew up. Most of the simulation programs do not include models of the IGBT. The authors present a new approach to the IGBT that is based on existing built-in models of PSPICE. The parameters needed can be specified by data sheet values and by measurement. The calculations of these parameters are derived from the physical equations describing the IGBT. Comparison between measurement and simulation shows good agreement in transient and steady-state behaviour
Keywords :
SPICE; equivalent circuits; insulated gate bipolar transistors; power transistors; semiconductor device models; IGBT model; PSPICE; power electronics; simulation programs; steady-state behaviour; transient behaviour;
Conference_Titel :
Power Electronics and Applications, 1993., Fifth European Conference on
Conference_Location :
Brighton
