Title :
40GHz FET amplifiers
Author :
Watkins, E. ; Yamasaki, Hirofumi ; Schellenberg, James
Author_Institution :
Hughes Aircraft Company, Torrance, CA, USA
Abstract :
RECENTLY, the dominance of two terminal devices at millimeter wave frequencies has been challenged by the GaAs FET. Diode technology has matured and performance is rapidly approaching fundamental limitations. Further significant advances in low noise performance will be achieved by using the comparatively young millimeter wave FET technology. The development of new FET device structures?? 2 and technology allows the realization of FET components at millimeter-wave frequencies with performance rivaling that of diode units4. This paper will describe a broadband FET amplifier to operate in the 33 to 40GHz frequency range.
Keywords :
Bandwidth; Circuit stability; Circuit testing; FETs; Fabrication; Fixtures; Frequency response; Noise figure; Operational amplifiers;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1982.1156284
