DocumentCode :
2873254
Title :
Electrostatic micro actuators with high-aspect-ratio driving gap for hard disk drive application
Author :
Iizuka, Tetsuhiko ; Oba, Tosliilziko ; Fujita, Hiro Yuki
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ., Japan
fYear :
2000
fDate :
2000
Firstpage :
229
Lastpage :
236
Abstract :
Micro actuators are developed for hard disk drive application. The aim is high density data storage by positioning the read and write head element precisely. The desired specifications are displacement of ±1 μm, operating voltage of 20 V and structural resonance frequency of 151 Hz. We fabricated a metallic actuator by using thick photoresist lithography and nickel electroplating. The electrostatic gap between the mover and the stator has high aspect ratio to achieve low voltage operation. We introduce a vertical sacrificial layer of copper to make the electrostatic gap. We utilize photoresist with thickness of 10 μm. We completed the process and operated the actuator successfully. We also developed a silicon actuator using silicon deep etching and deposition technology. We use ICP-RIE for silicon etching and LPCVD for deposition of the vertical sacrificial layer of SiO2 and the mover structure of polysilicon. We obtained an actuator which had thickness of 100 μm with electrode gap of aspect ratio of 50
Keywords :
chemical vapour deposition; disc drives; electroplating; electrostatic actuators; hard discs; magnetic heads; micromachining; micropositioning; photolithography; sputter etching; 100 micron; ICP-RIE; LPCVD; Ni; Si; deep etching and deposition; electrostatic microactuators; hard disk drive application; high density data storage; high-aspect-ratio driving gap; low voltage operation; metallic actuator; micromachining; nickel electroplating; polysilicon mover structure; precise positioning; read and write head element; silicon actuator; thick photoresist lithography; vertical sacrificial layer; Actuators; Electrostatics; Etching; Hard disks; Memory; Microactuators; Resists; Resonance; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micromechatronics and Human Science, 2000. MHS 2000. Proceedings of 2000 International Symposium on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-6498-8
Type :
conf
DOI :
10.1109/MHS.2000.903330
Filename :
903330
Link To Document :
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