DocumentCode
2873272
Title
Device applications of beam crystallized silicon-on-insulators
Author
Gibbons, J.
Author_Institution
Stanford University, Stanford, CA, USA
Volume
XXV
fYear
1982
fDate
10-12 Feb. 1982
Firstpage
233
Lastpage
233
Abstract
The properties of CW beam recrystallized thin polysilicon films on insulating substrates will be presented. MOSFET devices and simple ICs processed on this material have electrical characteristics similar to devices fabricated on single crystal material, offering significant promise for future applications.
Keywords
Crystallization; Electron beams; Grain size; Laser beams; MOSFETs; Molecular beam epitaxial growth; Shape control; Silicon on insulator technology; Size control; Velocity control;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1982.1156287
Filename
1156287
Link To Document