Title :
Measurement of intrinsic capacitances of MOS transistors
Author :
Paulos, James ; Antoniadis, D. ; Tsividis, Yannis
Author_Institution :
Massachusetts Institute of Technology, Cambridge, MA, USA
Abstract :
An electrometer/coulombmeter circuit technique to measure capacitance characteristics of the MOS transistor will be discussed. Experimental data for substrate capacitances, non-reciprocal elements and non-quasi-static effects, compared to theory, will be presented.
Keywords :
Capacitance measurement; Capacitive sensors; Capacitors; Circuit testing; Feedback; Frequency; MOSFETs; Resistors; Semiconductor device measurement; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1982.1156289
