Title :
Impact of SiGe heterostructures on silicon devices
Author :
Kasper, E. ; Wöhl, G.
Author_Institution :
Universitat Stuttgart
Keywords :
Charge carrier processes; Chemical technology; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Lattices; Microwave integrated circuits; Semiconductor materials; Silicon devices; Silicon germanium;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.771129
