DocumentCode :
2873425
Title :
International Meeting for Future of Electron Devices, Kansai (IEEE Cat. No. 04EX829)
fYear :
2004
fDate :
26-28 July 2004
Abstract :
The following topics are dealt with: nanoelectronics; wide band gap semiconductors; power electronic devices; characterization and testing technologies; compound semiconductors; III-V semiconductors; III-N semiconductors and related device technologies; surface treatments technologies and semiconductor reliability.
Keywords :
nanoelectronics; power electronics; semiconductor device reliability; semiconductor device testing; surface treatment; wide band gap semiconductors; III-N semiconductors; III-V semiconductors; characterization technology; compound semiconductors; device technologies; nanoelectronics; power electronic devices; semiconductor reliability; surface treatments; testing technology; wide band gap semiconductors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Future of Electron Devices, 2004. International Meeting for
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7803-8423-7
Type :
conf
DOI :
10.1109/IMFEDK.2004.1566379
Filename :
1566379
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2873425
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