DocumentCode :
2873497
Title :
Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy
Author :
Feng, Z.C. ; Arbet-Engels, V. ; Kumsiri, R.P.G. ; Wang, K.L. ; Walta, F. ; Lee, K.K. ; Wee, A.T.S. ; Hng, H.H. ; Williams, K.P.J.
Author_Institution :
National University of Singapore
fYear :
1994
fDate :
1994
Firstpage :
39847
Lastpage :
40942
Keywords :
Germanium silicon alloys; Infrared spectra; Mass spectroscopy; Molecular beam epitaxial growth; Photoluminescence; Plasma temperature; Raman scattering; Silicon germanium; X-ray diffraction; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771134
Filename :
771134
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2873497
