DocumentCode
2873508
Title
An X-band dielectrically-stabilized FET source
Author
Seligman, J.
Author_Institution
Itek/Applied Technology Division, Sunnyvale, CA, USA
Volume
XXV
fYear
1982
fDate
10-12 Feb. 1982
Firstpage
188
Lastpage
189
Abstract
A thin film hybrid GaAs FET (chip) oscillator, stabilized with a ceramic dielectric resonator for use in military avionic equipment, will be described. Frequency stability of better than ± 2 PPM/C° has been achieved with an output of 5-10mW, while operating at a frequency near 12GHz.
Keywords
Dielectric measurements; Frequency; Gallium arsenide; Microwave FETs; Microwave oscillators; Microwave theory and techniques; Q measurement; Reflection; Temperature sensors; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1982.1156301
Filename
1156301
Link To Document