• DocumentCode
    2873526
  • Title

    High hole mobility transistor (HHMT) with dual Si/Ge0.4Si0.6Si wells structure grown by Si MBE

  • Author

    Wang, S.J. ; Wu, S.L. ; Chung, H.D. ; Chang, W. ; Wang, K.L.

  • Author_Institution
    National Cheng Kung University
  • fYear
    1994
  • fDate
    1994
  • Firstpage
    42771
  • Lastpage
    43866
  • Keywords
    Boron; Chemicals; Germanium silicon alloys; Laboratories; Length measurement; Molecular beam epitaxial growth; Silicon germanium; Substrates; Temperature; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
  • Type

    conf

  • DOI
    10.1109/EDMS.1994.771136
  • Filename
    771136
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2873526