DocumentCode :
2873526
Title :
High hole mobility transistor (HHMT) with dual Si/Ge0.4Si0.6Si wells structure grown by Si MBE
Author :
Wang, S.J. ; Wu, S.L. ; Chung, H.D. ; Chang, W. ; Wang, K.L.
Author_Institution :
National Cheng Kung University
fYear :
1994
fDate :
1994
Firstpage :
42771
Lastpage :
43866
Keywords :
Boron; Chemicals; Germanium silicon alloys; Laboratories; Length measurement; Molecular beam epitaxial growth; Silicon germanium; Substrates; Temperature; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771136
Filename :
771136
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2873526
بازگشت