DocumentCode :
2873554
Title :
Diamond probe for ultra-high-density ferroelectric data storage based on scanning nonlinear dielectric microscopy
Author :
Takahashi, Hirokazu ; Ono, Takahito ; Cho, Yasuo ; Esashi, Masayoshi
Author_Institution :
Corporate R&D Labs., Pioneer Corp., Saitama, Japan
fYear :
2004
fDate :
2004
Firstpage :
536
Lastpage :
539
Abstract :
This paper reports on the development of a diamond multi-probe for ultra-high-density ferroelectric data storage based on scanning nonlinear dielectric microscopy (SNDM), which is a technique for determining polarized directions in ferroelectric domains by measuring a nonlinear dielectric constant with a inductance-capacitance resonator. SNDM has a capability of both reading and writing nano-sized polarized ferroelectric domain information at a high speed, since the SNDM technique is a purely electrical method. Boron-doped diamond synthesized by hot-filament chemical vapor deposition is chosen as a conductive and robust probe material. Probes are fabricated by using a silicon lost mold technique and selective growth method. We present the fabrication of the diamond multi-probe and data storage experiments using a ferroelectric LiTaO3 thin film. It is demonstrated that boron-doped diamond probe can be used for data storage based on SNDM.
Keywords :
boron; diamond; electric domains; ferroelectric materials; ferroelectric storage; ferroelectric thin films; lithium compounds; permittivity; scanning probe microscopy; C:B; LiTaO3; boron doped diamond; boron doped diamond probe; diamond probe; ferroelectric LiTaO3 thin film; hot filament chemical vapor deposition; inductance-capacitance resonator; nonlinear dielectric constant; polarized ferroelectric domain information; robust probe material; scanning nonlinear dielectric microscopy; silicon lost mold technique; ultra high density ferroelectric data storage; Chemical vapor deposition; Conducting materials; Dielectric constant; Dielectric measurements; Ferroelectric materials; Memory; Microscopy; Polarization; Probes; Robustness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)
Print_ISBN :
0-7803-8265-X
Type :
conf
DOI :
10.1109/MEMS.2004.1290640
Filename :
1290640
Link To Document :
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