Title :
State-of-the-art wide band-gap semiconductors for power electronic devices
Author :
Matsunami, Hiroyuki
Author_Institution :
Kyoto Univ., Japan
Abstract :
In this paper, state-of-the-art wide band-gap semiconductors is described mainly for SiC considering the application for power electronic devices including some of nitride-based devices.
Keywords :
power semiconductor devices; silicon compounds; wide band gap semiconductors; SiC; nitride-based devices; power electronic devices; wide band-gap semiconductors; Gallium arsenide; Gallium nitride; Photonic band gap; Power electronics; Semiconductor device doping; Semiconductor impurities; Semiconductor materials; Silicon carbide; Substrates; Wide band gap semiconductors;
Conference_Titel :
Future of Electron Devices, 2004. International Meeting for
Print_ISBN :
0-7803-8423-7
Electronic_ISBN :
0-7803-8424-5
DOI :
10.1109/IMFEDK.2004.1566388
