• DocumentCode
    2873567
  • Title

    High effective channel mobility back junction SiGe pmos: theory of operation

  • Author

    Niu, G.F. ; Ruan, G. ; Tang, T.A. ; Kwor, Richard

  • Author_Institution
    Fudan University
  • fYear
    1994
  • fDate
    1994
  • Firstpage
    45695
  • Lastpage
    46790
  • Keywords
    Dielectric constant; Doping; Gaussian channels; Gaussian processes; Germanium silicon alloys; MOSFET circuits; Numerical simulation; Silicon germanium; Springs; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
  • Type

    conf

  • DOI
    10.1109/EDMS.1994.771138
  • Filename
    771138
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2873567