Piezoresistive microphone with integrated amplifier realized using metal-induced laterally crystallized polycrystalline silicon

Author

Li, Gang ; Zohar, Yitshak ; Man Wong

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

fYear

2004

fDate

2004

Firstpage

548

Lastpage

551

Abstract

Compared to conventional polycrystalline silicon (poly-Si), re-crystallized (RC) metal-induced laterally crystallized (MILC) poly-Si possesses improved mechanical and electrical properties. RC-MILC poly-Si piezoresistors exhibit ∼25% increase in gauge factor and ∼50% reduction in noise level compared to conventional poly-Si piezoresistors. RC-MILC poly-Si transistors exhibit performance approaching those built on single-crystal silicon. As a demonstration of the feasibility of using the RC-MILC poly-Si technology to realize non-trivial micro-systems, microphone integrating piezoresistive strain sensors and amplifiers has been designed, fabricated and characterized.

Keywords

amplifiers; elemental semiconductors; microphones; microsensors; piezoelectric semiconductors; piezoresistive devices; resistors; silicon; strain sensors; Si; Si piezoresistors; conventional poly-Si piezoresistors; crystallized polycrystalline silicon; electrical properties; gauge factor; integrated amplifier; mechanical properties; metal induced laterally crystallized polycrystalline silicon; noise level reduction; nontrivial microsystems; piezoresistive microphone; piezoresistive strain sensors; poly-Si transistors; recrystallisation; single crystal silicon; Capacitive sensors; Chemical elements; Crystalline materials; Crystallization; Mechanical factors; Mechanical sensors; Microphones; Piezoresistance; Piezoresistive devices; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)

Print_ISBN

0-7803-8265-X

Type

conf

DOI

10.1109/MEMS.2004.1290643

Filename

1290643