DocumentCode
2873613
Title
Interface roughness effects on the properties of resonant tunneling hot electron transistor
Author
Sheng, Hanyu ; Chua, Soo Jin
Author_Institution
National University of Singapore
fYear
1994
fDate
1994
Firstpage
41701
Lastpage
42797
Keywords
Atomic layer deposition; Diodes; Electrons; Gallium arsenide; Interference; Particle scattering; Resonance; Resonant tunneling devices; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type
conf
DOI
10.1109/EDMS.1994.771149
Filename
771149
Link To Document