DocumentCode :
2873645
Title :
A GaAs double negative differential resistance device with a p+ AlGaAs base
Author :
Yarn, K.F. ; Chang, C.Y. ; Wang, Y.H. ; Wei, H.C. ; Sze, P.W. ; Jeng, J.M.
Author_Institution :
Nan-Tai Junior College of Technology
fYear :
1994
fDate :
1994
Firstpage :
43163
Lastpage :
44259
Keywords :
Diodes; Educational institutions; Electric resistance; Electrons; Frequency; Gallium arsenide; Gold; Resonant tunneling devices; Voltage; Yarn;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771154
Filename :
771154
Link To Document :
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