Title :
An Analytical Drain Current Model for Short-Channel Triple-Material Double-Gate MOSFETs
Author :
Agnihotri, Harshit ; Ranjan, Abhishek ; Tiwari, Pramod Kumar ; Jit, S.
Author_Institution :
Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Abstract :
In this paper, a strong inversion drain current model incorporating various effects such as channel length modulation has been developed for a short-channel symmetrical triple material - double gate (TM-DG) MOSFET based on the drift current equation. The model results have been compared with the simulation data obtained by using the commercially available device simulation software ATLAS™.
Keywords :
MOSFET; analytical drain current model; short-channel symmetrical TM-DG MOSFET; short-channel symmetrical triple material double gate MOSFET; simulation software ATLAS; Analytical models; Doping; Logic gates; MOSFETs; Materials; Mathematical model; Threshold voltage; TM DG MOSFET; drain current; drift current; hot- carrier effects;
Conference_Titel :
VLSI (ISVLSI), 2011 IEEE Computer Society Annual Symposium on
Conference_Location :
Chennai
Print_ISBN :
978-1-4577-0803-9
Electronic_ISBN :
2159-3469
DOI :
10.1109/ISVLSI.2011.86
