Title :
The carrier transport in the GaSb/AiSb/lnAs/GaSb/AlSb/InAs resonant interband tunneling structures
Author :
Liu, M.H. ; Wang, Y.H. ; Houng, M.P. ; Chen, J.F. ; Cho, A.Y.
Author_Institution :
National Cheng-Kung University
Keywords :
Boundary conditions; Charge carrier processes; Current density; Current-voltage characteristics; Electric resistance; Molecular beam epitaxial growth; Optical coupling; Resonance; Resonant tunneling devices; Temperature;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.771157
