Title :
Modeling Study of Impact of Surface Roughness on Flicker Noise in MOSFET
Author :
Galphade, Prafulla ; Dhavse, Rasika
Author_Institution :
Dept. of Electron. Eng., Sardar Vallabhbhai Nat. Inst. of Technol., Surat, India
Abstract :
The existing flicker noise models are either designed with assumption of smooth silicon surface or the impact of variation of roughness has not been taken into account by these models. In the proposed model, it has been considered that the factors, Oxide Thickness, Oxide Capacitance and Threshold Voltage, are affected by Surface Roughness. The fundamental philosophy for the development is same as Unified Model for Flicker Noise.
Keywords :
MOSFET; flicker noise; silicon; surface roughness; MOSFET; Si; flicker noise model; silicon surface; surface roughness; 1f noise; Mathematical model; Radio frequency; Rough surfaces; Semiconductor device modeling; Surface roughness; 1/f Noise; Prafulla Model; Prafulla´s Model; Surface Roughness; flicker noise; flicksys;
Conference_Titel :
VLSI (ISVLSI), 2011 IEEE Computer Society Annual Symposium on
Conference_Location :
Chennai
Print_ISBN :
978-1-4577-0803-9
Electronic_ISBN :
2159-3469
DOI :
10.1109/ISVLSI.2011.63
