DocumentCode
2873726
Title
Modeling Study of Impact of Surface Roughness on Flicker Noise in MOSFET
Author
Galphade, Prafulla ; Dhavse, Rasika
Author_Institution
Dept. of Electron. Eng., Sardar Vallabhbhai Nat. Inst. of Technol., Surat, India
fYear
2011
fDate
4-6 July 2011
Firstpage
333
Lastpage
334
Abstract
The existing flicker noise models are either designed with assumption of smooth silicon surface or the impact of variation of roughness has not been taken into account by these models. In the proposed model, it has been considered that the factors, Oxide Thickness, Oxide Capacitance and Threshold Voltage, are affected by Surface Roughness. The fundamental philosophy for the development is same as Unified Model for Flicker Noise.
Keywords
MOSFET; flicker noise; silicon; surface roughness; MOSFET; Si; flicker noise model; silicon surface; surface roughness; 1f noise; Mathematical model; Radio frequency; Rough surfaces; Semiconductor device modeling; Surface roughness; 1/f Noise; Prafulla Model; Prafulla´s Model; Surface Roughness; flicker noise; flicksys;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI (ISVLSI), 2011 IEEE Computer Society Annual Symposium on
Conference_Location
Chennai
ISSN
2159-3469
Print_ISBN
978-1-4577-0803-9
Electronic_ISBN
2159-3469
Type
conf
DOI
10.1109/ISVLSI.2011.63
Filename
5992513
Link To Document