GaN HEMTs: material, device, circuit technology and applications

Author

Parikh, P. ; Wu, Y.F. ; Moore, M. ; Chavarkar, P. ; Wisleder, T. ; Mishra, U.K. ; Sheppard, S. ; Smith, R.P. ; Saxler, A. ; Alien, S. ; Milligan, J. ; Palmour, J.

Author_Institution

Cree SBTC, Goleta, CA, USA

fYear

2004

fDate

26-28 July 2004

Firstpage

41

Lastpage

42

Abstract

With the rapid progress and maturation over the last several years, wide bandgap GaN-based HEMTs are now regarded as the next generation technology leader for high frequency and high power device applications as stated in U. K. Mishra et al. (2002). The Al_xGa_{1 - x}N-GaN heterostructure system enables high voltage, high current operation, resulting in the demonstration of > 10× power performance than GaAs and Si technologies. The high RF power density (W/mm) translates into high watts per unit capacitance (W/pF), resulting in high impedance and simpler matching, an enabler for wide-bandwidth applications. This paper reviews the recent progress in material, device and circuit performance of GaN HEMTs by the Cree team.

Keywords

III-V semiconductors; power HEMT; wide band gap semiconductors; AlGaN-GaN; circuit technology; device technology; heterostructure system; high electron mobility transistor; high frequency device; high power device; material technology; Capacitance; Circuits; Gallium arsenide; Gallium nitride; HEMTs; Impedance; MODFETs; Photonic band gap; Radio frequency; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, 2004. International Meeting for

Print_ISBN

0-7803-8423-7

Electronic_ISBN

0-7803-8424-5

Type

conf

DOI

10.1109/IMFEDK.2004.1566398

Filename

1566398