• DocumentCode
    2873805
  • Title

    Numerical analysis of the gate lag phenomena in GaAs MESFET´s

  • Author

    Lo, S.H. ; Lee, C.P.

  • Author_Institution
    National Chiao Tung University
  • fYear
    1994
  • fDate
    1994
  • Firstpage
    36982
  • Lastpage
    38078
  • Keywords
    Charge carrier processes; Electron traps; Gallium arsenide; MESFETs; Numerical analysis; Ohmic contacts; Pulse measurements; Pulse width modulation; Space vector pulse width modulation; Steady-state;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
  • Type

    conf

  • DOI
    10.1109/EDMS.1994.771196
  • Filename
    771196
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2873805