Title :
Numerical simulations of kink phenomena and the related backgating effect in GaAs MESFETs
Author :
Horio, K. ; Usami, K. ; Satoh, K.
Author_Institution :
Shibaura Institute of Technology
Keywords :
Charge carrier processes; Electric breakdown; Electron traps; Gallium arsenide; Impact ionization; MESFETs; Modeling; Numerical simulation; Poisson equations; Voltage;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.771198
