DocumentCode
2873808
Title
Numerical simulations of kink phenomena and the related backgating effect in GaAs MESFETs
Author
Horio, K. ; Usami, K. ; Satoh, K.
Author_Institution
Shibaura Institute of Technology
fYear
1994
fDate
1994
Firstpage
38444
Lastpage
39540
Keywords
Charge carrier processes; Electric breakdown; Electron traps; Gallium arsenide; Impact ionization; MESFETs; Modeling; Numerical simulation; Poisson equations; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type
conf
DOI
10.1109/EDMS.1994.771198
Filename
771198
Link To Document