DocumentCode :
2873852
Title :
Al2O3 formation by wet oxidation of AlAs for GaAs MOS device
Author :
Lee, Yong-Soo ; Lee, Yong-Hyun ; Lee, Jae- Jin ; Lee, Hae-Kwon ; Lee, Jung-Hee
Author_Institution :
Kyungpook National University
fYear :
1994
fDate :
1994
Firstpage :
39906
Lastpage :
41002
Keywords :
Capacitance-voltage characteristics; Chemicals; Dielectric substrates; Frequency estimation; Gallium arsenide; Kinetic energy; MOS devices; Molecular beam epitaxial growth; Oxidation; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771200
Filename :
771200
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2873852
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