DocumentCode :
2873872
Title :
Insb photo-mosfet fabricated by photo-enhanced chemical vapor deposition
Author :
Liu, Biing-Der ; Lee, Si-Chen ; Sun, Tai-Ping ; Yang, Sheng-Jenn
Author_Institution :
National Taiwan University
fYear :
1994
fDate :
1994
Firstpage :
42830
Lastpage :
43926
Keywords :
Bonding; Chemical vapor deposition; Chromium; Equivalent circuits; Fabrication; Gold; Infrared detectors; MOSFET circuits; Switches; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771203
Filename :
771203
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2873872
بازگشت