DocumentCode :
2873890
Title :
Composition of selectively grown GaxIn1-xP from high resolution double-crystal x-ray measurement
Author :
Chan, Shih-Hsiung ; Sze, Simon M. ; Chang, Chun-Yen
Author_Institution :
National Chiao Tung University
fYear :
1994
fDate :
1994
Firstpage :
45754
Lastpage :
46850
Keywords :
Chemical vapor deposition; Epitaxial growth; Gain measurement; Gallium arsenide; Indium phosphide; Insulation; MOCVD; Plasma temperature; Quantum dots; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771206
Filename :
771206
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2873890
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