Metamorphosis of ultra-thin top Si layer of SOI substrate into 3C-SiC using a rapid thermal process

RTP was employed to metamorphose the ultra-thin top Si (111) layer into 3C-SiC, suppressing the 3D growth of SiC and improving the undulation at the interface between the top SiC and buried oxide layers. As a result, a very flat and uniform 3 nm thick 3C-SiC seed layer was obtained. It implies a high possibility for growing thick epitaxial 3C-SiC layers onto ultra-thin 3C-SiC seed layers formed by RTP.