Title :
Metamorphosis of ultra-thin top Si layer of SOI substrate into 3C-SiC using a rapid thermal process
Author :
Iikawa, H. ; Nakao, M. ; Yokoyama, T. ; Kobayashi, S. ; Izumi, K.
Author_Institution :
Osaka Prefecture Univ., Japan
Abstract :
RTP was employed to metamorphose the ultra-thin top Si (111) layer into 3C-SiC, suppressing the 3D growth of SiC and improving the undulation at the interface between the top SiC and buried oxide layers. As a result, a very flat and uniform 3 nm thick 3C-SiC seed layer was obtained. It implies a high possibility for growing thick epitaxial 3C-SiC layers onto ultra-thin 3C-SiC seed layers formed by RTP.
Keywords :
buried layers; epitaxial growth; rapid thermal processing; silicon-on-insulator; surface roughness; 3 nm; C-SiC; Si (111) layer; buried oxide layers; rapid thermal process; silicon-on-insulator; thick epitaxial layer growth; ultra-thin top Si layer; Electrons; Furnaces; Gallium nitride; Rapid thermal processing; Rough surfaces; Silicon carbide; Silicon on insulator technology; Substrates; Surface morphology; Surface roughness;
Conference_Titel :
Future of Electron Devices, 2004. International Meeting for
Print_ISBN :
0-7803-8423-7
Electronic_ISBN :
0-7803-8424-5
DOI :
10.1109/IMFEDK.2004.1566407
