DocumentCode
2873934
Title
Modeling of MOSFETs for CMOS RF-IC Design
Author
Lu, Guizhu ; Shi, Zhiyuan ; Li, Gary
Author_Institution
Dept. of Electron. Eng., Dongguan Univ. of Technol., Dongguan
fYear
2007
fDate
16-18 April 2007
Firstpage
66
Lastpage
69
Abstract
High-frequency (HF) modeling of MOSFETs for radio-frequency (RF) integrated circuit (IC) design is discussed. Modeling of the quasi-static (QS) and non-quasi-static (NQS) effect is discussed. Through the simulation results of the QS and NQS model with the comparison to the measured data, it is proved that the inclusion of the NQS effect would be a desirable feature for a RF model.
Keywords
CMOS integrated circuits; MOSFET; field effect MIMIC; integrated circuit design; semiconductor device models; CMOS RF-IC design; MOSFET modeling; high-frequency modeling; nonquasistatic effect; quasistatic effect; radio-frequency integrated circuit design; ultra HF applications; CMOS integrated circuits; Data mining; Design engineering; Hafnium; Integrated circuit modeling; MOSFETs; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Anti-counterfeiting, Security, Identification, 2007 IEEE International Workshop on
Conference_Location
Xiamen, Fujian
Print_ISBN
1-4244-1035-5
Electronic_ISBN
1-4244-1035-5
Type
conf
DOI
10.1109/IWASID.2007.373697
Filename
4244783
Link To Document