Title :
Energy band structure tailoring of InGaAsP/InGaAsP quantum well prepared by organometallic vapor phase epitaxy and measured by photoluminescence
Author :
Lin, Wei ; Shiao, Hung-Pin ; Chang, Chwan-Yang ; Shi, Tian-Tsomg ; Lee, Ching-Ting ; Tu, Yuan-Kuang
Author_Institution :
National Central University
Keywords :
Energy measurement; Epitaxial growth; Indium gallium arsenide; Indium phosphide; Optical fiber communication; Phase measurement; Photoluminescence; Photonic band gap; Transmission electron microscopy; Wavelength measurement;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.771210