DocumentCode :
2873953
Title :
Energy band structure tailoring of InGaAsP/InGaAsP quantum well prepared by organometallic vapor phase epitaxy and measured by photoluminescence
Author :
Lin, Wei ; Shiao, Hung-Pin ; Chang, Chwan-Yang ; Shi, Tian-Tsomg ; Lee, Ching-Ting ; Tu, Yuan-Kuang
Author_Institution :
National Central University
fYear :
1994
fDate :
1994
Firstpage :
12153
Lastpage :
13249
Keywords :
Energy measurement; Epitaxial growth; Indium gallium arsenide; Indium phosphide; Optical fiber communication; Phase measurement; Photoluminescence; Photonic band gap; Transmission electron microscopy; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771210
Filename :
771210
Link To Document :
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