• DocumentCode
    2873953
  • Title

    Energy band structure tailoring of InGaAsP/InGaAsP quantum well prepared by organometallic vapor phase epitaxy and measured by photoluminescence

  • Author

    Lin, Wei ; Shiao, Hung-Pin ; Chang, Chwan-Yang ; Shi, Tian-Tsomg ; Lee, Ching-Ting ; Tu, Yuan-Kuang

  • Author_Institution
    National Central University
  • fYear
    1994
  • fDate
    1994
  • Firstpage
    12153
  • Lastpage
    13249
  • Keywords
    Energy measurement; Epitaxial growth; Indium gallium arsenide; Indium phosphide; Optical fiber communication; Phase measurement; Photoluminescence; Photonic band gap; Transmission electron microscopy; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
  • Type

    conf

  • DOI
    10.1109/EDMS.1994.771210
  • Filename
    771210
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2873953