DocumentCode :
2874004
Title :
A novel LOCOS SPI (self-aligned-pocket-implantation) technology for a half micron NMOSFET
Author :
Kim, C.J. ; Jang, H.W. ; Jang, Y.S. ; Jin, J.H. ; Lim, S.K. ; Choi, K.H.
Author_Institution :
SAMSUNG Electronics
fYear :
1994
fDate :
1994
Firstpage :
39936
Lastpage :
40666
Keywords :
Delay effects; Electrodes; Implants; Impurities; Ion implantation; Isolation technology; MOSFET circuits; Parasitic capacitance; Research and development; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771213
Filename :
771213
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2874004
