• DocumentCode
    2874004
  • Title

    A novel LOCOS SPI (self-aligned-pocket-implantation) technology for a half micron NMOSFET

  • Author

    Kim, C.J. ; Jang, H.W. ; Jang, Y.S. ; Jin, J.H. ; Lim, S.K. ; Choi, K.H.

  • Author_Institution
    SAMSUNG Electronics
  • fYear
    1994
  • fDate
    1994
  • Firstpage
    39936
  • Lastpage
    40666
  • Keywords
    Delay effects; Electrodes; Implants; Impurities; Ion implantation; Isolation technology; MOSFET circuits; Parasitic capacitance; Research and development; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
  • Type

    conf

  • DOI
    10.1109/EDMS.1994.771213
  • Filename
    771213
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2874004