Title :
A new buffered p+ poly-gate for suppression of boron penetration effect
Author :
Lin, Chih Yung ; Chang, Chun-Yen ; Chou, Jih Wen ; Pan, Hong-Tsz ; Lin, Chih Hung ; Ko, Joe
Author_Institution :
National Chiao Tung University
Keywords :
Amorphous silicon; Boron; CMOS technology; Capacitance-voltage characteristics; Electrodes; Etching; Laboratories; MOSFET circuits; Microelectronics; Threshold voltage;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.771215
