Reliability testing of InGaAs mesa stucture waveguide photodiodes for 40-Gb/s optical receiver applications

Author

Joo, Han Sung ; Jeon, Su Chang ; Lee, Bongyong ; Kwon, Yong Hwan ; Choe, Joong-Seon ; Yun, Ilgu

Author_Institution

Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea

fYear

2004

fDate

26-28 July 2004

Firstpage

73

Lastpage

74

Abstract

As a summary, the reliability testing of mesa InGaAs WGPDs from the viewpoint of evaluation long-term reliability has been investigated using the accelerated life tests. From the reliability testing results, it was found that the WGPD structure yielded devices that exhibited the median lifetime of much longer than 106 h at practical use conditions. Consequently, this WGPD structure has sufficient characteristics for practical 40-Gb/s optical receiver modules.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; life testing; optical receivers; optical waveguides; photodiodes; reliability; 40 Gbit/s; InGaAs; accelerated life tests; mesa stucture; optical receiver; reliability testing; waveguide photodiodes; Indium gallium arsenide; Life estimation; Life testing; Optical fiber communication; Optical fibers; Optical receivers; Optical waveguides; Passivation; Photodiodes; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, 2004. International Meeting for

Print_ISBN

0-7803-8423-7

Electronic_ISBN

0-7803-8424-5

Type

conf

DOI

10.1109/IMFEDK.2004.1566414

Filename

1566414