Title :
Reliability testing of InGaAs mesa stucture waveguide photodiodes for 40-Gb/s optical receiver applications
Author :
Joo, Han Sung ; Jeon, Su Chang ; Lee, Bongyong ; Kwon, Yong Hwan ; Choe, Joong-Seon ; Yun, Ilgu
Author_Institution :
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
Abstract :
As a summary, the reliability testing of mesa InGaAs WGPDs from the viewpoint of evaluation long-term reliability has been investigated using the accelerated life tests. From the reliability testing results, it was found that the WGPD structure yielded devices that exhibited the median lifetime of much longer than 106 h at practical use conditions. Consequently, this WGPD structure has sufficient characteristics for practical 40-Gb/s optical receiver modules.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; life testing; optical receivers; optical waveguides; photodiodes; reliability; 40 Gbit/s; InGaAs; accelerated life tests; mesa stucture; optical receiver; reliability testing; waveguide photodiodes; Indium gallium arsenide; Life estimation; Life testing; Optical fiber communication; Optical fibers; Optical receivers; Optical waveguides; Passivation; Photodiodes; Temperature;
Conference_Titel :
Future of Electron Devices, 2004. International Meeting for
Print_ISBN :
0-7803-8423-7
Electronic_ISBN :
0-7803-8424-5
DOI :
10.1109/IMFEDK.2004.1566414
