Title :
Quantum-mechanical enhancement of short-channel effects in ultra-thin SOI MOSFETs
Author :
Konishi, Hideki ; Sato, Shingo ; Komiya, Kenji ; Omura, Yasuhisa
Author_Institution :
Dept. of Electron., Kansai Univ., Osaka, Japan
Abstract :
In summary, in ultra-thin SOI MOSFETs, the DIBL was suppressed, while the charge-sharing effects are enhanced with distinct QMEs. Influences of distinct QMEs on drivability are the remaining issues.
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; DIBL; charge-sharing effects; quantum-mechanical enhancement; short-channel effects; ultra thin SOI MOSFET; Capacitance; Doping; Electrodes; Electron devices; Hydrodynamics; MOSFETs; Manuals; Semiconductor process modeling; Surface resistance; Threshold voltage;
Conference_Titel :
Future of Electron Devices, 2004. International Meeting for
Print_ISBN :
0-7803-8423-7
Electronic_ISBN :
0-7803-8424-5
DOI :
10.1109/IMFEDK.2004.1566415
