Title :
GaAs switched geometry oscillator for X and Ku bands
Author_Institution :
Texas Instruments, Inc., Dallas, TX, USA
Abstract :
A single oscillator circuit using an FET pair with RF coupled, dc isolated gates, which is capable of operating at two widely separated but selectable frequencies, will be presented. Unswitched, the oscillations are at 200GHz, and when the second FET is pinched off, the output frequency changes to 12.5GHz.
Keywords :
Bonding; Capacitors; Circuits; FETs; Gallium arsenide; Geometry; Impedance; Radio frequency; Voltage-controlled oscillators; Wire;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1982.1156336
