DocumentCode
2874135
Title
GaAs switched geometry oscillator for X and Ku bands
Author
Scott, B.
Author_Institution
Texas Instruments, Inc., Dallas, TX, USA
Volume
XXV
fYear
1982
fDate
10-12 Feb. 1982
Firstpage
190
Lastpage
191
Abstract
A single oscillator circuit using an FET pair with RF coupled, dc isolated gates, which is capable of operating at two widely separated but selectable frequencies, will be presented. Unswitched, the oscillations are at 200GHz, and when the second FET is pinched off, the output frequency changes to 12.5GHz.
Keywords
Bonding; Capacitors; Circuits; FETs; Gallium arsenide; Geometry; Impedance; Radio frequency; Voltage-controlled oscillators; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1982.1156336
Filename
1156336
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