• DocumentCode
    2874190
  • Title

    Profile angle control in SiO2 deep anisotropic dry etching for MEMS fabrication

  • Author

    Pavius, M. ; Hibert, C. ; Flückiger, Ph ; Renaud, Ph ; Rolland, L. ; Puech, M.

  • Author_Institution
    EPFL Centre of MicroNanoTechnol., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
  • fYear
    2004
  • fDate
    2004
  • Firstpage
    669
  • Lastpage
    672
  • Abstract
    We report a recent breakthrough to control profile angle for SiO2 deep anisotropic dry etching (SDADE). Our study reveals that gas residence time is the key parameter to control profile angle. Moreover, we show that it is possible to control profile angle, SiO2 etch rate and SiO2 selectivity to Si mask independently. Finally, the optimized process has the following performances: angle profile: 89.8°, SiO2 etch rate: 500 nm/min, selectivity: 18:1.
  • Keywords
    etching; micromechanical devices; silicon compounds; MEMS fabrication; SiO2; SiO2 deep anisotropic dry etching; SiO2 etch rate; microelectromechanical systems; profile angle control; Anisotropic magnetoresistance; Artificial intelligence; Dry etching; Fabrication; Helium; Inductors; Micromechanical devices; Pressure control; Radio frequency; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)
  • Print_ISBN
    0-7803-8265-X
  • Type

    conf

  • DOI
    10.1109/MEMS.2004.1290673
  • Filename
    1290673
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2874190