• DocumentCode
    2874201
  • Title

    Difference in structural stability between SrBi2Ta2O9 and Bi4-xLaxTi3O12 under vacuum and high temperature annealing stress

  • Author

    Tatsumi, Naoyuki ; Tamai, Shin-Ichi ; Kobayashi, Hiroyuki ; Maeda, Yoshihito ; Nozawa, Hiroshi

  • Author_Institution
    Dept. of Energy Sci. & Technol., Kyoto Univ., Japan
  • fYear
    2004
  • fDate
    26-28 July 2004
  • Firstpage
    89
  • Lastpage
    90
  • Abstract
    It has been reported that less fatigue behaviors and low leakage currents of SrBi2Ta2O9 (SBT) and Bi4-xLaxTi3O12 (BLT) rise from oxygen ion compensation from the (Bi2O2)+ layer to the perovskite lattice. In this study, the structural changes (phase transitions and local structures) of SBT and BLT after annealing in vacuum were studied to examine the crucial factor for their structural stability.
  • Keywords
    bismuth compounds; fatigue; ferroelectric semiconductors; lanthanum compounds; leakage currents; rapid thermal annealing; stress effects; strontium compounds; substrates; tantalum compounds; titanium compounds; BLT; BiLaTi3O12; SBT; SrBi2Ta2O9; fatigue behaviors; high temperature annealing stress; leakage currents; local structures; perovskite lattice; phase transitions; structural stability; vacuum stress; Bismuth; Crystallization; Ferroelectric films; Rapid thermal annealing; Stability; Stress; Structural engineering; Temperature; X-ray diffraction; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, 2004. International Meeting for
  • Print_ISBN
    0-7803-8423-7
  • Electronic_ISBN
    0-7803-8424-5
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2004.1566422
  • Filename
    1566422
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2874201