Title :
Difference in structural stability between SrBi2Ta2O9 and Bi4-xLaxTi3O12 under vacuum and high temperature annealing stress
Author :
Tatsumi, Naoyuki ; Tamai, Shin-Ichi ; Kobayashi, Hiroyuki ; Maeda, Yoshihito ; Nozawa, Hiroshi
Author_Institution :
Dept. of Energy Sci. & Technol., Kyoto Univ., Japan
Abstract :
It has been reported that less fatigue behaviors and low leakage currents of SrBi2Ta2O9 (SBT) and Bi4-xLaxTi3O12 (BLT) rise from oxygen ion compensation from the (Bi2O2)+ layer to the perovskite lattice. In this study, the structural changes (phase transitions and local structures) of SBT and BLT after annealing in vacuum were studied to examine the crucial factor for their structural stability.
Keywords :
bismuth compounds; fatigue; ferroelectric semiconductors; lanthanum compounds; leakage currents; rapid thermal annealing; stress effects; strontium compounds; substrates; tantalum compounds; titanium compounds; BLT; BiLaTi3O12; SBT; SrBi2Ta2O9; fatigue behaviors; high temperature annealing stress; leakage currents; local structures; perovskite lattice; phase transitions; structural stability; vacuum stress; Bismuth; Crystallization; Ferroelectric films; Rapid thermal annealing; Stability; Stress; Structural engineering; Temperature; X-ray diffraction; X-ray scattering;
Conference_Titel :
Future of Electron Devices, 2004. International Meeting for
Print_ISBN :
0-7803-8423-7
Electronic_ISBN :
0-7803-8424-5
DOI :
10.1109/IMFEDK.2004.1566422
