DocumentCode :
2874268
Title :
Ellipsometric Investigation of Micropore Formation in Silicon Layers Implanted by High Dose Ions of Krypton.
Author :
Buynova, E.Y. ; Galjautdinov, M.F. ; Kurbatova, N.V. ; LShtyrkov, E.
fYear :
1996
fDate :
8-13 Sept. 1996
Firstpage :
197
Lastpage :
197
Keywords :
Artificial intelligence; Chemical lasers; Inorganic materials; Laser ablation; Optical materials; Particle beam optics; Polymers; Silicon; Spectroscopy; X-ray lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-optics Europe, 1996. CLEO/Europe., Conference on
Conference_Location :
Hamburg, Germany
Print_ISBN :
0-7803-3169-9
Type :
conf
DOI :
10.1109/CLEOE.1996.562322
Filename :
562322
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2874268
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