• DocumentCode
    2874320
  • Title

    Heterojunction bipolar transistor technology for analog and digital applications

  • Author

    Chang, M.F. ; Asbeck, P.M. ; Wang, K.C. ; Sheng, N.H. ; Ho, W.J. ; Wang, N.L. ; Higgins, J.A.

  • Author_Institution
    Rockwell Science Center
  • fYear
    1994
  • fDate
    1994
  • Firstpage
    37073
  • Lastpage
    38169
  • Keywords
    Breakdown voltage; FETs; Gallium arsenide; Heterojunction bipolar transistors; Large scale integration; Lithography; Microwave circuits; Microwave transistors; Optical device fabrication; Schottky diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
  • Type

    conf

  • DOI
    10.1109/EDMS.1994.771241
  • Filename
    771241
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2874320