DocumentCode :
2874337
Title :
Effects of conduction band discontinuity and two dimensional electron gas on the dc characteristics of InAlAs/InGaAs and InAlAs/InAlGaAs DHBT´s
Author :
Huang, Chao-Hsing ; Lee, Tsuen-Lin ; Lin, Hao-Hsiung
Author_Institution :
National Taiwan University
fYear :
1994
fDate :
1994
Firstpage :
38535
Lastpage :
39631
Keywords :
Chaos; Conducting materials; Doping; Double heterojunction bipolar transistors; Electrons; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771245
Filename :
771245
Link To Document :
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